, u na. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n pn p powe r transisto r 2sa64 9 descriptio n ? collector-emitte r breakdow n voltage - :v (br)c eo=-150v(min. ) ? wid e are a o f saf e operatio n application s ? designe d fo r audi o powe r amplifie r applications . absolut e maximu m ratings(t a =25'c ) symbo l vcb o vce o veb o i c ic m p c t j tsl g paramete r collector-bas e voltag e collector-emitte r voltag e emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k collecto r powe r dissipatio n @t c =25' c junctio n temperatur e storag e temperatur e valu e -15 0 -15 0 - 5 ~7 -1 1 8 0 15 0 -55-15 0 uni t vv v a a w ? c r i pi n 1 . bas e 2 . bwiitte r 3 . collec t o r (case ) to- 3 packag e * ' ' ? ~?4u - d j p l i , di m a b c d e g h k l n 9 u v mil l mi n ma x 330 0 25.3 0 7.9 0 o.s o m o 366 7 8.5. 0 m o 1,6 0 109 2 54 6 11.5 0 167 5 194 0 40 0 30.0 0 43 0 135 0 170 5 196 2 42 0 302 0 45 0 n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s \vithou t noiiee . informatio n furnishe d b y n. i semi-conduetor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . i kmever . n. i semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . " n j sem i -conductor s encourage s customer s t o verif y tha i datasheet s ar e curren t befor e placin g orders . qualit y semi-conductor s downloaded from: http:///
silico n pn p powe r transisto r 2sa64 9 electrica l characteristic s tj=25' c unles s otherwis e specifie d symbo l v(br)cbo v(br)ce o v(br)eb o vce(sat ) v b e(sat) igb o ieb o hf e f r paramete r collector-bas e breakdow n voltag e collector-emitte r breakdow n voltag e emitter-bas e breakdow n voltag e collector-emitte r saturatio n voltag e base-emitte r saturatio n voltag e collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n current-gai n bandwidt h produc t condition s lc=-1ma ; i e = 0 lc = -25ma ; i b = 0 l e =-1ma ; l c = 0 lc = -5a ; i b = -0.5 a lc = -5a ; i b = -0.5 a v cb =-150v ; i e = 0 v eb = -5v ; l c = 0 l c = -3a ; v ce = -5 v lc=-1a;v g e=-5 v mi n -15 0 -15 0 - 5 3 0 typ . 1 0 ma x -2. 0 -2. 5 -0. 1 -0. 1 12 0 uni t v vv v m a m a mh z downloaded from: http:///
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